Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices-Reference-Cited by-同舟云学术

Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices

Published:2017-01-11 Issue:9 Volume:56 Page:091604
ISSN:0091-3286
Container-title:Optical Engineering
language:en
Short-container-title:Opt. Eng

Author:

Haugan Heather J.¹,Olson Benjamin V.²,Brown Gail J.¹,Kadlec Emil A.²,Kim Jin K.²,Shaner Eric A.²

Affiliation:

1. Air Force Research Laboratory, Materials and Manufacturing Directorate, 2179 12th Street, Wright-Patterson Air Force Base, Ohio 45433, United States

2. Sandia National Laboratories, P.O. Box 5800 MS 1085, Albuquerque, New Mexico 87185, United States

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Reference32 articles.

1. Proposal for strained type II superlattice infrared detectors

2. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review

3. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb

4. Modeling of very long infrared wavelength InAs/GaInSb strained layer superlattice detectors

5. Progress in Infrared Photodetectors Since 2000

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