EUV for HVM: towards an industrialized scanner for HVM NXE3400B performance update-Reference-Cited by-同舟云学术

EUV for HVM: towards an industrialized scanner for HVM NXE3400B performance update

Published:2018-03-19 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography IX
language:
Short-container-title:

Author:

van de Kerkhof Mark A.,Minnaert Arthur W. E.,Pieters Marco,Meiling Hans,Smits Joost,Peeters Rudy,van Es Roderik,Fisser Geert,de Klerk Jos W.,Moors Roel,Verhoeven Eric,Levasier Leon

Publisher

SPIE

Reference17 articles.

1. EUV Lithography Performance for Manufacturing: Status and Outlook;Pirati,2016

2. Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner;van de Kerkhof,2017

3. The future of EUV Lithography;Pirati,2017

4. Industrialization of a robust EUV source for high-volume manufacturing and power scaling beyond 250W;Purvis,2018

5. Cross-platform (NXE-NXT) machine-to-machine overlay matching supporting next node chip manufacturing;Thijssen,2018

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A global plasma and surface model of hydrogen/methane inductively coupled discharge to analyze hydrocarbon plasma–surface interactions in extreme-ultraviolet lithography machines;Journal of Applied Physics;2024-07-22

2. Pattern deformation mitigation for EUV photoresists using wafer backside cleaning techniques;Japanese Journal of Applied Physics;2024-03-01

3. 极紫外光刻中的边缘放置误差控制;Chinese Journal of Lasers;2024

4. Efficient photo-dissociation-induced production of hydrogen radicals using vacuum ultraviolet light from a laser-produced plasma;Applied Physics Letters;2024-01-01

5. Comparative Study of the Thermal Stability of Be-Based Extreme Ultraviolet Pellicles;Technical Physics;2023-12