Novel and cost-effective multiple patterning technology by means of invisible SiOxNy hardmask-Reference-Cited by-同舟云学术

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Novel and cost-effective multiple patterning technology by means of invisible SiOxNy hardmask

Published:2014-03-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Jang Linus,Moon Young Joon,Kim Ryoung-Han,Bencher Christopher,Dai Huixiong,Xie Peng,Diehl Daniel L.,Cao Yong,Zeng Wilson,Ngai Christopher S.

Publisher

SPIE

Reference18 articles.

1. EUV mask readiness and challenges for the 22nm half pitch and beyond;Chan,2011

2. ASML’s NXE platform performance and volume introduction;Peeters,2013

3. Evaluation of double-patterning techniques for advanced logic nodes;Koay,2010

4. Advanced patterning solutions based on double exposure: double patterning and beyond;Bae,2009

5. Process capability comparison between LELE DPT and spacer for NAND flash 32nm and below;Tseng,2008

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Challenges for immersion lithography extension based on negative tone imaging (NTI) process;SPIE Proceedings;2016-03-25

2. Challenges for Immersion Lithography Extension based on Negative Tone Imaging (NTI) Process;Journal of Photopolymer Science and Technology;2016

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