Effect of defects on extreme ultraviolet pellicle
Author:
Affiliation:
1. Hanyang Univ. (Korea, Republic of)
2. Fastlitho Inc. (United States)
3. Boston Univ. (United States)
4. SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Publisher
SPIE
Reference12 articles.
1. International Technology Roadmap for Semiconductors (ITRS), 2012 edition
2. Investigation of Contamination Removal from Finished EUVL Mask
3. Carbon contamination of EUV mask: film characterization, impact on lithographic performance, and cleaning
4. Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials
5. Effect of EUV exposure upon surface residual chemicals on EUV mask surface
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