Optimization and stability of CD variability in pitch 40 nm contact holes on NXE:3300-Reference-Cited by-同舟云学术

Optimization and stability of CD variability in pitch 40 nm contact holes on NXE:3300

Published:2018-10-03 Issue: Volume: Page:
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Container-title:International Conference on Extreme Ultraviolet Lithography 2018
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Author:

van Look Lieve,Bekaert Joost,Frommhold Andreas,Hendrickx Eric,Rispens Gijsbert,Schiffelers Guido

Publisher

SPIE

Reference19 articles.

1. Freeform and SMO;Socha,2011

2. Stochastic effects in EUV lithography: random, local CD variability, and printing failures;De Bisschop;J. of Micro/Nanolithography, MEMS, and MOEMS,2017

3. Improvements in resist performance towards EUV HVM;Yildirim,2017

4. Contrast optimization for 0.33NA EUV lithography;Finders,2016

5. Characterization and control of EUV scanner dose uniformity and stability;Robinson,2018

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