Negative response of HgCdTe photodiode induced by nanosecond laser pulse-Reference-Cited by-同舟云学术

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Negative response of HgCdTe photodiode induced by nanosecond laser pulse

Published:2017-05-12 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Xu Zuodong¹,Zhang Jianmin¹,Lin Xinwei¹,Shao Bibo¹,Yang Pengling¹

Affiliation:

1. Northwest Institute of Nuclear Technology (China)

Publisher

SPIE

Reference6 articles.

1. Experimental research on saturation characteristics of silicon p-i-n photodiode induced by femtosecond laser;Dou;Chinese J Quantum Electronics,2012

2. Detector response to high repetition rate ultra-short laser pulses;Zakharova,2015

3. Analysis of the negative voltage-response in the InGaAs p-i-n photodiode under mode-locked laser illumination;Hu;J. Infrared Millim. Waves,2015

4. NEGATIVE PHOTOVOLTAIC-RESPONSES IN HgCdTe INFRARED PHOTOVOLTAIC DETECTORS IRRADIATED WITH PICOSECOND PULSED LASER

5. Study of Schottky contact in HgCdTe infrared photovoltaic detectors

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