Using synchrotron light to accelerate EUV resist and mask materials learning-Reference-Cited by-同舟云学术

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Using synchrotron light to accelerate EUV resist and mask materials learning

Published:2011-02-02 Issue: Volume: Page:
ISSN:0277-786X
Container-title:27th European Mask and Lithography Conference
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Author:

Naulleau Patrick,Anderson Christopher N.,Baclea-an Lorie-Mae,Denham Paul,George Simi,Goldberg Kenneth A.,Jones Gideon,McClinton Brittany,Miyakawa Ryan,Mochi Iacopo,Montgomery Warren,Rekawa Seno,Wallow Tom

Publisher

SPIE

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of direct patternable inorganic spin-on hard mask materials using electron beam lithography;Microelectronic Engineering;2012-10

2. Demonstration of 22nm SRAM features with patternable hafnium oxide-based resist material using electron-beam lithography;SPIE Proceedings;2012-03-29

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