Unbiased roughness measurements: subtracting out SEM effects, part 3-Reference-Cited by-同舟云学术

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Unbiased roughness measurements: subtracting out SEM effects, part 3

Published:2019-03-26 Issue: Volume: Page:
ISSN:
Container-title:Metrology, Inspection, and Process Control for Microlithography XXXIII
language:
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Author:

Mack Chris A.,Van Roey Frieda,Lorusso Gian

Publisher

SPIE

Reference11 articles.

1. Lithographic stochastics: beyond 3σ

2. Assessment of pattern variability and defectivity by large-scale SEM metrology with >100 million measurements

3. Edge placement error fundamentals and impact of EUV: will traditional design-rule calculations work in the era of EUV?

4. Stochastic printing failures in extreme ultraviolet lithography

5. Unbiased roughness measurements: Subtracting out SEM effects

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Practical LWR sampling approaches for advanced patterning;Metrology, Inspection, and Process Control XXXVIII;2024-04-10

2. Overlay and edge placement error metrology in the era of stochastics;Metrology, Inspection, and Process Control XXXVII;2023-04-27

3. e-beam metrology of thin resist for high NA EUVL;Japanese Journal of Applied Physics;2023-04-14

4. Unbiased roughness measurements from low signal-to-noise ratio scanning electron microscope images;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-12-14

5. Metrology of thin resist for high NA EUVL;Metrology, Inspection, and Process Control XXXVI;2022-05-26

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