Novel approaches to implement the self-aligned spacer double-patterning process toward 11-nm node and beyond-Reference-Cited by-同舟云学术

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Novel approaches to implement the self-aligned spacer double-patterning process toward 11-nm node and beyond

Published:2011-03-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Yaegashi Hidetami,Oyama Kenichi,Yabe Kazuo,Yamauchi Shohei,Hara Arisa,Natori Sakurako

Publisher

SPIE

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-depth discussion on pitch doubling flow CpK improvement through process integration;Advanced Etch Technology and Process Integration for Nanopatterning XIII;2024-04-09

2. A holistic study on metal pitch uniformity control in the scheme of self-aligned double patterning;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

3. Investigation of CD Precise Control in Pitch Doubling Flow for Memory Industry;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

4. Self-aligned double patterning for active trim contacts with anisotropic pattern pitches in sub-20 nm dynamic random access memories;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-12-18

5. Combining double patterning with self-assembled block copolymer lamellae to fabricate 10.5 nm full-pitch line/space patterns;Nanotechnology;2019-08-22

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