Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films-Reference-Cited by-同舟云学术

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Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films

Published:2012-06-01 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Photonics for Solar Energy Systems IV
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Author:

Emelyanov Andrey V.,Khenkin Mark V.,Kazanskii Andrey G.,Forsh Pavel A.,Kashkarov Pavel K.,Lyubin Evgeny V.,Khomich Andrey A.,Gecevicius Mindaugas,Beresna Martynas,Kazansky Peter G.

Publisher

SPIE

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous Silicon;Nanomaterials;2020-12-26

2. Fabrication of Anisotropic Structures on the Surface of Amorphous Silicon by Femtosecond Laser Pulses;Solid State Phenomena;2020-11

3. Anisotropy of optical, electrical, and photoelectrical properties of amorphous hydrogenated silicon films modified by femtosecond laser irradiation;Technical Physics;2017-06

4. The influence of an air atmosphere on the electrical properties of two-phase films of hydrogenated silicon;Moscow University Physics Bulletin;2015-07

5. Laser-ablated silicon nanoparticles: optical properties and perspectives in optical coherence tomography;Laser Physics;2015-06-26

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