Toward sub-20nm pitch Fin patterning and integration with DSA-Reference-Cited by-同舟云学术

Toward sub-20nm pitch Fin patterning and integration with DSA

Published:2016-03-28 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Sayan Safak,Marzook Taisir,Chan BT,Vandenbroeck Nadia,Singh Arjun,Laidler David,Sanchez Efrain A.,Leray Philippe,R. Delgadillo Paulina,Gronheid Roel,Vandenberghe Geert,Clark William,Juncker Aurelie

Publisher

SPIE

Reference8 articles.

1. Towards an all-track 300 mm process for directed self-assembly

2. Safak Sayan, B. T. Chan, Roel Gronheid, Frieda Van Roey, Min-Soo Kim, Lance Williamson, Paul Nealey, “Directed self-assembly process integration: Fin patterning approaches and challenges” Proc. of SPIE Vol. 9051 90510M-1

3. U.S. Patent US20150243509, “A Method for Producing Fin Structures of a Semiconductor Device in a Substrate”, Boon Teik Chan, Safak Sayan, Min-Soo Kim, Doni Parnell, Roel Gronheid

4. Directed self-assembly process integration: fin patterning approaches and challenges;Sayan,2015

5. Interfacial Segregation in Disordered Block Copolymers: Effect of Tunable Surface Potentials

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