1. M. van de Kerkhof et al, “Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner”, Paper 10143-9, SPIE advanced lithography 2017, to be published.
2. Printability and actinic AIMS review of programmed mask blank defects;Verduijn,2017
3. Actinic review of EUV masks: performance data and status of the AIMS™ EUV System;Hellweg,2016
4. Illumination pupil optimization in 0.33NA EUVL by intensity balancing for semi-iso dark field two-bar M1 building blocks;Last,2016
5. Investigation of buried EUV mask defect printability using actinic inspection and fast simulation;Clifford,2009