3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node-Reference-Cited by-同舟云学术

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3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node

Published:2007-10-05 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Saied Mazen,Foussadier Franck,Belledent Jérôme,Trouiller Yorick,Schanen Isabelle,Yesilada Emek,Gardin Christian,Urbani Jean Christophe,Sundermann Frank,Robert Frédéric,Couderc Christophe,Vautrin Florent,LeCam Laurent,Kerrien Gurwan,Planchot Jonathan,Martinelli Catherine,Wilkinson Bill,Rody Yves,Borjon Amandine,Morgana Nicolo,Di-Maria Jean-Luc,Farys Vincent

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mask Corner Rounding in OPC Modeling;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. A fast and flexible library-based thick-mask near-field calculation method;SPIE Proceedings;2015-03-18

3. Improved convolution kernel based DFM model for nano-scale circuits;Acta Physica Sinica;2015

4. Modeling the field diffracted from photo mask at oblique incidence;Applied Optics;2010-07-27

5. Application of the hybrid Hopkins–Abbe method in full-chip OPC;Microelectronic Engineering;2009-04

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