Analysis of the effect of surface recombination on the results of microwave photoconductive decay method for measuring minority carrier lifetime of HgCdTe epilayers-Reference-Cited by-同舟云学术

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Analysis of the effect of surface recombination on the results of microwave photoconductive decay method for measuring minority carrier lifetime of HgCdTe epilayers

Published:2023-08-17 Issue: Volume: Page:
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Container-title:3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023)
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Author:

Chen Shan,Li PeiYuan,Yuan ShouZhang,Kong JinCheng,Cong ShuRen,Li Jun,Wan ZhiYuan,Zhu Hui

Publisher

SPIE

Reference12 articles.

1. Noncontact lifetime characterization technique for LWIR HgCdTe using transient millimeter-wave reflectance[J];Schimert,1991

2. Physics and technology of mercury cadmium telluride materials [M];Jianrong,2012

3. Effect of the dislocation density on minority‐carrier lifetime in molecular beam epitaxial HgCdTe

4. Effect of dislocations on minority carrier lifetime in HgCdTe

5. Minority carrier lifetime in indium-doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy[J];Wijewarnasuriya;Journal of Electronic Materials,1995

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