Lithography simulation employing rigorous solutions to Maxwell's equations
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SPIE
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mask 3D model based on complex-valued convolution neural network for EUV lithography;2022 International Workshop on Advanced Patterning Solutions (IWAPS);2022-10-21
2. Comprehensive and quantitative characterization and analysis method of 3D mask effect for lithography simulation;10th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced and Extreme Micro-Nano Manufacturing Technologies;2021-12-13
3. Rigorous EUV absorber model for the mask modeling with deep learning techniques;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-11-03
4. Solution of the inhomogeneous Maxwell’s equations using a Born series;Optics Express;2017-10-03
5. Investigating the performance of directional boundary layer model through staged modeling method;SPIE Proceedings;2011-03-17
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