Imaging performance of EUV lithography optics configuration for sub-9nm resolution-Reference-Cited by-同舟云学术

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Imaging performance of EUV lithography optics configuration for sub-9nm resolution

Published:2015-03-16 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Neumann Jens Timo,Rösch Matthias,Gräupner Paul,Migura Sascha,Kneer Bernhard,Kaiser Winfried,van Ingen Schenau Koen

Publisher

SPIE

Reference7 articles.

1. Interaction of 3D mask effects and NA in EUV lithography;Neumann,2012

2. 3D reticle effects for high NA EUV lithography;Neumann,2012

3. Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio;Neumann,2013

4. EUV lithography optics for sub 9nm resolution;Migura,2014

5. EUVL lithography scanner for sub 9nm resolution;Van Schoot,2014

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EUV optics at ZEISS: status, outlook, and future;Optical and EUV Nanolithography XXXVII;2024-04-10

2. Design of A Large Field of View High Numerical Aperture Extreme Ultraviolet Lithography Illumination System;2023 International Workshop on Advanced Patterning Solutions (IWAPS);2023-10-26

3. 极紫外光刻机曝光系统光学设计研究与进展;Acta Optica Sinica;2023

4. Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-05-11

5. Pushing the limits of EUV mask repair: addressing sub-10 nm defects with the next generation e-beam-based mask repair tool;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-09-07

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