Mechanism of hole accumulation at α-NPD/Alq 3 interface studied by displacement current measurement
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Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low-dose measurement of electric potential distribution in organic light-emitting diode by phase-shifting electron holography with 3D tensor decomposition;Microscopy;2023-02-28
2. Direct visualization of electric potential distribution in organic light emitting diode by phase-shifting electron holography;Applied Physics Express;2021-07-01
3. Probing interfacial charge accumulation in ITO/α-NPD/Alq3/Al diodes under two electroluminescence operational modes by electric-field induced optical second-harmonic generation;Journal of Applied Physics;2012-10-15
4. Device properties of Alq3-based organic light-emitting diodes studied by displacement current measurement;Journal of Photonics for Energy;2012-07-18
5. Charge accumulation at organic semiconductor interfaces due to a permanent dipole moment and its orientational order in bilayer devices;Journal of Applied Physics;2012-06
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