Author:
Chawla J. S.,Singh K. J.,Myers A.,Michalak D. J.,Schenker R.,Jezewski C.,Krist B.,Gstrein F.,Indukuri T. K.,Yoo H. J.
Reference15 articles.
1. Demonstration of a 12 nm-half-pitch copper ultralow-k interconnect process
2. Demonstration of an electrically functional 34 nm metal pitch interconnect in ultralow-k ILD using spacer-based pitch quartering
3. Analysis of higher order pitch division for sub-32nm lithography;Xie,2009
4. Advancing Moore’s Law With Pitch Division;Borodovsky,2007
5. ITRS 2010 Update: International Technology Roadmap for Semiconductors, 2010.
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献