Two-dimensional numerical simulation of HgCdTe infrared detectors-Reference-Cited by-同舟云学术

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Two-dimensional numerical simulation of HgCdTe infrared detectors

Published:1998-10-26 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Jo Nam H.,Yoo Sang D.,Ko B. G.,Lee Seok W.,Jang J.,Lee S. D.,Kwack Kae D.

Publisher

SPIE

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental investigation and calculation of the spectral dependence of the absorption coefficient of single-layer epitaxial HgCdTe structures;Journal of Communications Technology and Electronics;2016-10

2. MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements;Journal of Electronic Materials;2010-04-20

3. Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling;Journal of Electronic Materials;2010-03-09

4. The mechanism of the photoresponse blueshifts for the n-type conversion region of n+-on-p Hg0.722Cd0.278Te infrared photodiode;Journal of Applied Physics;2010-02-15

5. Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors;Journal of Applied Physics;2009-05-15

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