Helium ion beam lithography (HIBL) using HafSOx as the resist-Reference-Cited by-同舟云学术

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Helium ion beam lithography (HIBL) using HafSOx as the resist

Published:2016-03-21 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Luo Feixiang,Manichev Viacheslav,Li Mengjun,Mitchson Gavin,Yakshinskiy Boris,Gustafsson Torgny,Johnson David,Garfunkel Eric

Publisher

SPIE

Reference22 articles.

1. Cramming More Components Onto Integrated Circuits

2. Evolution of light source technology to support immersion and EUV lithography

3. Extreme ultraviolet lithography: A review

4. ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW

5. Berger, M. J., Coursey, J., Zucker, M. et al., [Stopping-power and range tables for electrons, protons, and helium ions].

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-12-27

2. Evolution in Lithography Techniques: Microlithography to Nanolithography;Nanomaterials;2022-08-11

3. A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope;Beilstein Journal of Nanotechnology;2021-07-02

4. Helium ion beam lithography and liftoff;Nano Futures;2021-06-01

5. Resists for Helium Ion Beam Lithography: Recent Advances;ACS Applied Electronic Materials;2020-11-24

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