Flicker noise in nitrided high-k dielectric NMOS transistors-Reference-Cited by-同舟云学术

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Flicker noise in nitrided high-k dielectric NMOS transistors

Published:2005-05-23 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Min Bigang,Devireddy Siva P.,Celik Butler Zeynep,Shanware Ajit,Green Keith,Chambers J. J.,Visokay M. V.,Colombo Luigi,Rotondaro A. L. P.

Publisher

SPIE

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical modeling of flicker noise in DG-FinFETs with multi-layered nitrided high-κ gate dielectric;Solid-State Electronics;2013-07

2. FDSOI devices with thin BOX and ground plane integration for 32nm node and below;Solid-State Electronics;2009-07

3. Analysis and selection criteria of BSIM4 flicker noise simulation models;International Journal of Circuit Theory and Applications;2008-10

4. Physics-based 1/f noise model for MOSFETs with nitrided high-κ gate dielectrics;Solid-State Electronics;2008-05

5. FDSOI devices with thin BOX and ground plane integration for 32nm node and below;ESSDERC 2008 - 38th European Solid-State Device Research Conference;2008

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