Highly sensitive x-ray and electron-beam resists using chemical amplification-Reference-Cited by-同舟云学术

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Highly sensitive x-ray and electron-beam resists using chemical amplification

Published:1990-06-01 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Dammel Ralph R.¹,Lindley Charlet R.²,Pawlowski Georg¹,Scheunemann Ude²,Theis Juergen²

Affiliation:

1. Hoechst AG (USA)

2. Hoechst AG (Germany)

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemically Amplified Resist Using Self‐Solubility Acceleration Effect;Journal of The Electrochemical Society;1994-11-01

2. Effects of Electron Beam Damage on the Electrical Characteristics of n-type Metal-Oxide-Semiconductor Field-Effect-Transistors;Japanese Journal of Applied Physics;1994-03-15

3. A systematic characterization of AZPN114 electron beam resist;Microelectronic Engineering;1994-01

4. Negative i-line photoresist for 0.5 μm and beyond;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-11

5. A novel chemically amplified positive deep UV photoresist with significantly reduced sensitivity to environmental contamination;Polymer Engineering and Science;1992-11

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