Fin formation using graphoepitaxy DSA for FinFET device fabrication-Reference-Cited by-同舟云学术

Fin formation using graphoepitaxy DSA for FinFET device fabrication

Published:2015-03-19 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Alternative Lithographic Technologies VII
language:
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Author:

Liu Chi-Chun,Lie Fee Li,Rastogi Vinayak,Franke Elliott,Mohanty Nihar,Farrell Richard,Tsai Hsinyu,Lai Kafai,Ozlem Melih,Cho Wooyong,Jung Sung Gon,Strane Jay,Somervell Mark,Burns Sean,Felix Nelson,Guillorn Michael,Hetzer David,Ko Akiteru,Colburn Matthew

Publisher

SPIE

Reference8 articles.

1. DEFECT SOURCE ANALYSIS OF DIRECTED SELF-ASSEMBLY PROCESS (DSA OF DSA);DELGADILLO,2013

2. PROCESS SENSITIVITIES IN EXEMPLARY CHEMO-EPITAXY DIRECTED SELF-ASSEMBLY INTEGRATION;DELGADILLO,2013

3. TOWARDS ELECTRICAL TESTABLE SOI DEVICES USING DIRECTED SELF-ASSEMBLY FOR FIN FORMATION;LIU,2014

4. HIGH-VOLUME MANUFACTURING EQUIPMENT AND PROCESSING FOR DIRECTED SELF-ASSEMBLY APPLICATIONS;SOMERVELL,2014

5. Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

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5. Field-theoretic Simulations of Directed Self-assembly for Contact Multiplication;Journal of Photopolymer Science and Technology;2015