Analysis of overlay errors induced by exposure energy in negative tone development process for photolithography-Reference-Cited by-同舟云学术

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Analysis of overlay errors induced by exposure energy in negative tone development process for photolithography

Published:2014-03-31 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Kim Young Ha,Kim Jang-Sun,Kim Young-Hoon,Cho Byeong-Ok,Choi Jinphil,Kang Young Seog,Ha Hunhwan

Publisher

SPIE

Reference8 articles.

1. Application of an inverse Mack model for negative tone development simulation;Gao,2011

2. Printing the metal and contact layers for the 32- and 22-nm node: comparing positive and negative tone development process;Look,2010

3. Advances and challenges in dual-tone development process optimization;Fonseca,2009

4. Resist Material for negative tone development process;Tarutani,2010

5. Comparing positive and negative tone development process for printing the metal and contact layers of the 32- and 22-nm nodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of resist parameters to improve the profile and process window of the contact pattern in advanced node;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-12-20

2. High-order distortion control using a computational prediction method for device overlay;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-03-29

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