Experimental validation of stochastic modeling for negative-tone develop EUV resists-Reference-Cited by-同舟云学术

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Experimental validation of stochastic modeling for negative-tone develop EUV resists

Published:2015-03-19 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Kamohara Itaru,Gao Weimin,Klostermann Ulrich,Schmöller Thomas,Demmerle Wolfgang,Lucas Kevin,De Simone Danilo,Hendrickx Eric,Vandenberghe Geert

Publisher

SPIE

Reference5 articles.

1. Calibration and verification of a stochastic model for EUV resist;Gao,2012

2. Sentaurus Lithography (S-Litho), http://www.synopsys.com/Tools/Manufacturing/MaskSynthesis/Pages/Sentaurus-Lithography.aspx

3. Experimental validation of rigorous, 3D profile models for negative-tone develop (NTD) resist;Gao,2014

4. Photobase generator and photo decomposable quencher for high-resolution photoresist applications;CWWang,2010

5. EUV sensitive Si containing hard mask (Si-HM) For PTD and NTD process in EUVL;Shibayama,2014

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selection approach of critical patterns for calibrating the physical resist model based on spectrum coverage;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-10-26

2. Stochastic Modeling and Local CD Uniformity Comparison between Negative Metal-Based, Negative- and Positive-Tone Development EUV Resists;IEICE Transactions on Electronics;2022-01-01

3. Prediction of EUV stochastic microbridge probabilities by lithography simulations;Extreme Ultraviolet (EUV) Lithography XI;2020-03-23

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