Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

Author:

Babichev A. V.1,Karachinsky L. Ya.1,Novikov I. I.1,Gladyshev A. G.1,Mikhailov S.2,Iakovlev V.2,Sirbu A.2,Stepniak G.3,Chorchos L.3,Turkiewicz J. P.3,Agustin M.4,Ledentsov N. N.4,Voropaev K. O.5,Ionov A. S.5,Egorov A. Yu.1

Affiliation:

1. Connector Optics LLC (Russian Federation)

2. RTI-Research SA (Switzerland)

3. Warsaw Univ. of Technology (Poland)

4. VI Systems GmbH (Germany)

5. OKB-Planeta PLC (Russian Federation)

Publisher

SPIE

Reference17 articles.

1. Industry VCSELs;Bimberg,2014

2. Record Single-Mode, High-Power VCSELs by Inhibition of Spatial Hole Burning

3. Power-efficient answer

4. VCSEL product guide. http://www.beamexpress.com/vcsel2.php (accessed Dec 15, 2016)

5. Communications VCSEL Product Catalog http://www.vertilas.com/sites/default/files/Downloads/vertilas_communications_v5_0_0.pdf (accessed Dec 15, 2016)

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