Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs-Reference-Cited by-同舟云学术

Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

Published:2017-02-25 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Babichev A. V.¹,Karachinsky L. Ya.¹,Novikov I. I.¹,Gladyshev A. G.¹,Mikhailov S.²,Iakovlev V.²,Sirbu A.²,Stepniak G.³,Chorchos L.³,Turkiewicz J. P.³,Agustin M.⁴,Ledentsov N. N.⁴,Voropaev K. O.⁵,Ionov A. S.⁵,Egorov A. Yu.¹

Affiliation:

1. Connector Optics LLC (Russian Federation)

2. RTI-Research SA (Switzerland)

3. Warsaw Univ. of Technology (Poland)

4. VI Systems GmbH (Germany)

5. OKB-Planeta PLC (Russian Federation)

Publisher

SPIE

Reference17 articles.

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5. Communications VCSEL Product Catalog http://www.vertilas.com/sites/default/files/Downloads/vertilas_communications_v5_0_0.pdf (accessed Dec 15, 2016)

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