SEM AutoAnalysis for reduced turnaround time and to ensure repair quality of EUV photomasks-Reference-Cited by-同舟云学术

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SEM AutoAnalysis for reduced turnaround time and to ensure repair quality of EUV photomasks

Published:2019-09-26 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Extreme Ultraviolet Lithography 2019
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Author:

Egodage Kokila D.,Tu Fan,Schneider Horst,Hermanns Christian F.,Kersteen Grizelda,Szafranek Bartholomaeus,Schulz Kristian

Publisher

SPIE

Reference13 articles.

1. EUV mask defects and their removal;Rastegar,2012

2. A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection;Huh,2010

3. Printability study of EUV double patterning for CMOS metal layers;Simone,2019

4. LePedus, “EUV mask gaps and issues”, Semiconductor Engineering, 8 May 2019, https://semiengineering.com/euv-mask-gaps-and-issues/ (4 July 2019)

5. eBeam Initiative, “Mask Maker Survey”, 18 September 2018, https://www.ebeam.org/docs/eBe.am-Mask-Maker-Survey-2018.pdf (24 July 2019).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-end EUV photomask repairs for 5nm technology and beyond;Photomask Technology 2020;2020-10-06

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