Patterning challenges in advanced device architectures: FinFETs to nanowires-Reference-Cited by-同舟云学术

Patterning challenges in advanced device architectures: FinFETs to nanowires

Published:2016-03-23 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Horiguchi N.,Milenin A. P.,Tao Z.,Hubert H.,Altamirano-Sanchez E.,Veloso A.,Witters L.,Waldron N.,Ragnarsson L.-Å.,Kim M. S.,Kikuchi Y.,Mertens H.,Raghavan P.,Piumi D.,Collaert N.,Barla K.,Thean A. V.

Publisher

SPIE

Reference19 articles.

1. Holisitic device exploration for 7nm node

2. Vertical Device Architecture for 5nm and beyond: Device & Circuit Implications;Thean,2015

3. Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap

4. Pulsed high-density plasmas for advanced dry etching processes

5. Fluorocarbon-based passivation in STI plasma etching;Milenin,2012

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