Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features-Reference-Cited by-同舟云学术

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Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features

Published:2020-04-06 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography XI
language:
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Author:

Dutta Ashim,Church Jennifer,Lee Joe,O’Brien Brendan,Meli Luciana,Liu Chi-Chun,Sharma Saumya,Petrillo Karen,Murray Cody J.,Liu Eric,Lutker-Lee Katie,Lou Qiaowei,Cole Christopher,Raley Angélique,Ko Akiteru,Kal Subhadeep,Kaminsky Jake,Mosden Aelan,Zhang Henan,Hu Shan,Huli Lior,Shibata Naoki,Hetzer Dave,Hsieh Chia-Yun

Publisher

SPIE

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lithography performance improvement of MOR by underlayers;Advances in Patterning Materials and Processes XLI;2024-04-09

2. SoC Profile Control for BEOL Tri-Layer Patterning Scheme;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

3. SiARC Residue Reduction Methods with Minimizing Profile Change for Mask Patterning;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

4. Covid-19 impact on financial growth and guidelines for green recovery in BRICS: fresh insights from econometric analysis;Economic Change and Restructuring;2022-12-21

5. International Roadmap for Devices and Systems lithography roadmap;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-10-04

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