An innovative TPV device design based on narrow gap IV-VI semiconductor MQW structures-Reference-Cited by-同舟云学术

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An innovative TPV device design based on narrow gap IV-VI semiconductor MQW structures

Published:2019-09-09 Issue: Volume: Page:
ISSN:
Container-title:New Concepts in Solar and Thermal Radiation Conversion II
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Author:

Khodr Majed,Chakraburtty Manisha,McCann Patrick

Publisher

SPIE

Reference18 articles.

1. The Value of Energy Storage for Grid Applications;Denholm,2013

2. Thermophotovoltaics: a potential pathway to high efficiency concentrated solar power

3. Thermal energy grid storage using multi-junction photovoltaics

4. MBE growth of PbSe/CaF2/Si(1 1 1) heterostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Matching Short Current Density for Dual Junction Lead Salts TPV Device at 1400 C⁰;2022 International Conference on Electrical and Computing Technologies and Applications (ICECTA);2022-11-23

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