Negative differential transconductance in conventional heterojunction TFET
Author:
Publisher
SPIE
Reference18 articles.
1. Design Insights Into Switching Performance of Germanium Source L-Shaped Gate Dopingless TFET Based on Cladding Layer Concept
2. IEEE Transactions on Electron Devices
3. Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
4. A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction
5. Sub-10-nm Diameter Vertical Nanowire p-Type GaSb/InAsSb Tunnel FETs
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