Experimental investigation of a high-k reticle absorber system for EUV lithography-Reference-Cited by-同舟云学术

Experimental investigation of a high-k reticle absorber system for EUV lithography

Published:2019-05-01 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography X
language:
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Author:

Finders Jo,de Kruif Robbert,Timmermans Frank,García Santaclara Jara,Connolly Bríd M.,Bender Markus,Schurack Frank,Onoue Takahiro,Ikebe Yohei,Farrar Dave

Publisher

SPIE

Reference6 articles.

1. Best Focus Shift Mechanism for Thick Masks;Martin,2015

2. Attenuated PSM for EUV: Can they mitigate 3D mask effects?;Andreas,2018

3. Mitigation of mask three-dimensional induced phase effects by absorber optimization in ArFiand extreme ultraviolet lithography

4. Ion beam etching of new absorber materials for sub-5nm EUV masks;Narasimhan,2019

5. Holistic approach for overlay and edge placement error to meet the 5nm technology node requirements;Jan,2018

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