Chemical amplification of resist lines: a novel sub-half-micron bilayer resist tehnique for NUV and deep-UV lithography-Reference-Cited by-同舟云学术

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Chemical amplification of resist lines: a novel sub-half-micron bilayer resist tehnique for NUV and deep-UV lithography

Published:1990-06-01 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Sebald Michael¹,Leuschner Rainer¹,Sezi Recai¹,Ahne Hellmut¹,Birkle Siegfried¹

Affiliation:

1. Siemens AG (Germany)

Publisher

SPIE

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photolithography;Materials Science and Technology;2013-02-15

2. Below 70-nm contact hole pattern with RELACS process on ArF resist;Advances in Resist Technology and Processing XX;2003-06-11

3. Role of Bilayer Resist in 157 nm Lithography;Journal of Photopolymer Science and Technology;2003

4. Advanced RELACS Technology for ArF Resist;Journal of Photopolymer Science and Technology;2003

5. Copolymers from tert-butyl methacrylate and 2-propenyl isocyanate—polymers for photoresist application;Polymer;2003-01

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