A novel quantum well RTD with intensive and continuous current oscillation in the bias voltage range higher than 3.15 V-Reference-Cited by-同舟云学术

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A novel quantum well RTD with intensive and continuous current oscillation in the bias voltage range higher than 3.15 V

Published:2024-01-16 Issue: Volume:58 Page:7
ISSN:
Container-title:Workshop on Electronics Communication Engineering (WECE 2023)
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Author:

Zhang Haipeng,Ma Lijian,Bai Jianling,Zhang Qiang,Li Xiaoying,Geng Lu,Fang Qi

Publisher

SPIE

Reference9 articles.

1. A GaAs/AlGaAs Based Asymmetrical DBS (ADBS) RTD;Zhang,2015

2. Self-consistent vertical transport calculations in AlxGa1–xN/GaN based resonant tunneling diode

3. Giant peak to valley ratio in a GaN based resonant tunnel diode with barrier width modulation

4. Electrical characterization of triple barrier GaAs/AlGaAs RTD with dependence of operating temperature and barrier lengths

5. A Restrain Method of Polarization Effect in GaN/AlGaN RTD;Zhang;Advances in Computer Science Research,2017

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