The role of stoichiometric vacancy periodicity in pressure-induced amorphization of the Ga2SeTe2 semiconductor alloy-Reference-Cited by-同舟云学术

The role of stoichiometric vacancy periodicity in pressure-induced amorphization of the Ga2SeTe2 semiconductor alloy

Author:

Abdul-Jabbar N. M.¹²,Kalkan B.³,Huang G.-Y.⁴,MacDowell A. A.³,Gronsky R.⁵,Bourret-Courchesne E. D.²,Wirth B. D.¹⁴

Affiliation:

1. Department of Nuclear Engineering, University of California, Berkeley, California 94720, USA

2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

3. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

4. Department of Nuclear Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA

5. Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA

Funder

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference24 articles.

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