In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition-Reference-Cited by-同舟云学术

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In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

Published:2011-07-25 Issue:4 Volume:99 Page:042904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Milojevic M.,Contreras-Guerrero R.,O’Connor E.,Brennan B.,Hurley P. K.,Kim J.,Hinkle C. L.,Wallace R. M.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3615666

Reference26 articles.

1. Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance–Voltage Characteristics

2. Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces

3. Defect states at III-V semiconductor oxide interfaces

4. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

5. Studies of GaAs–oxide interfaces with and without Si interlayer

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principles methods;Applied Surface Science;2019-07

2. Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy;ACS Omega;2018-02-21

3. A crystalline oxide passivation on In0.53Ga0.47As (100);Journal of Applied Physics;2017-03-28

4. Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment;Applied Surface Science;2017-02

5. Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces;Applied Surface Science;2016-12

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