Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias-Reference-Cited by-同舟云学术

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Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

Published:2014-09-22 Issue:12 Volume:105 Page:123503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bansal Kanika¹,Henini Mohamed²,Alshammari Marzook S.³,Datta Shouvik¹

Affiliation:

1. Division of Physics, Indian Institute of Science Education and Research, Pune 411008, Maharashtra, India

2. Nottingham Nanotechnology and Nanoscience Centre, School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

3. The National Center of Nanotechnology, KACST, Riyadh 11442, Saudi Arabia

Funder

CSIR, India

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896541

Reference15 articles.

1. Voltage modulated electro-luminescence spectroscopy to understand negative capacitance and the role of sub-bandgap states in light emitting devices

2. Role of light emission and sub-bandgap defects in the dielectric response of electroluminescent diodes

3. Temperature dependent reversal of voltage modulated light emission and negative capacitance in AlGaInP based multi quantum well light emitting devices

4. Negative capacitance caused by electron injection through interfacial states in organic light-emitting diodes

5. Elucidating negative capacitance in light-emitting diodes using an advanced semiconductor device theory

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