Self-induced ferroelectric 2-nm-thick Ge-doped HfO2 thin film applied to Ge nanowire ferroelectric gate-all-around field-effect transistor-Reference-Cited by-同舟云学术

Self-induced ferroelectric 2-nm-thick Ge-doped HfO2 thin film applied to Ge nanowire ferroelectric gate-all-around field-effect transistor

Published:2020-12-28 Issue:26 Volume:117 Page:262109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Yi-Wen¹,Sun Chong-Jhe¹,Chang Hao-Hsiang¹,Huang Yu-Hsien¹,Yu Tung-Yuan²,Wu Yung-Chun¹^ORCID,Hou Fu-Ju²^ORCID

Affiliation:

1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan

2. Taiwan Semiconductor Research Institute, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0029628

Reference26 articles.

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2. Ferroelectric negative capacitance

3. Atomic-Level Analysis of Sub-5-nm-Thick Hf0.5Zr0.5O2 and Characterization of Nearly Hysteresis-Free Ferroelectric FinFET

4. Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack

5. Stabilizing the ferroelectric phase in doped hafnium oxide

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