Fully planar method for creating adjacent ‘‘self‐isolating’’ silicon‐on‐insulator and epitaxial layers by epitaxial lateral overgrowth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106643
Reference5 articles.
1. Three-dimensional stacked MOS transistors by localized silicon epitaxial overgrowth
2. Limitations in low‐temperature silicon epitaxy due to water vapor and oxygen in the growth ambient
3. Dislocation Etch for (100) Planes in Silicon
4. Issues and Problems Involved in Selective Epitaxial Growth of Silicon for SOI Fabrication
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