Lattice Disorder in Ion‐Implanted Boron‐Doped Silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653724
Reference4 articles.
1. INTERACTION BETWEEN B ATOMS AND DEFECTS PRODUCED BY Hg BOMBARDEMENT IN SILICON
2. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
3. TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS
4. Flux and fluence dependence of disorder produced during implantation of11B in silicon
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1. Localization of carbon atoms and extended defects in silicon implanted separately with C+ and B+ ions and jointly with C+ and B+ ions;Physics of the Solid State;2013-02
2. Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-10
3. Impurity ion implantation into silicon single crystals: efficiency and radiation damage;Uspekhi Fizicheskih Nauk;1995
4. Radiation defects and electrical properties of silicon layers containing Sb and As implanted with Si+ ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04
5. Charge state of intrinsic interstitial defects and their substitution of boron atoms in the silicon lattice;Soviet Physics Journal;1991-04
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