Improved Al/InP Schottky barriers by coimplantation of Be/P
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109979
Reference11 articles.
1. InP-metal barrier junctions with improved I-V characteristics
2. Electrical study of Schottky barrier heights on atomically clean and air‐exposedn‐InP(110) surfaces
3. A study of Schottky contacts on indium phosphide
4. Schottky Contacts on n-InP Surface Treated by Plasma-Induced Oxygen Radicals
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1. The physics and chemistry of the Schottky barrier height;Applied Physics Reviews;2014-03
2. InP/InGaAs heterojunction bipolar transistors with low-resistance contact on heavily doped InP emitter layer;Applied Physics Letters;2004-04-12
3. Recent advances in Schottky barrier concepts;Materials Science and Engineering: R: Reports;2001-11
4. Cross-sectional TEM of Pd/InP and Au/lnP interfaces formed at substrate temperatures near 300 and 77K;Journal of Electronic Materials;1996-10
5. MIS diodes on n-InP with tantalum oxide interfacial layer grown by rapid thermal oxidation of tantalum;Physica Status Solidi (a);1994-12-16
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