Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1450262
Reference12 articles.
1. Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
2. InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
3. InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
4. Solid phase immiscibility in GaInN
5. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
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