First principles study of thermoelectric properties of β-gallium oxide
Author:
Affiliation:
1. Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, USA
Funder
National Science Foundation
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0027791
Reference61 articles.
1. Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
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4. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes
5. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V
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