Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3021015
Reference16 articles.
1. Applications of Modern Ferroelectrics
2. A New Metal–Ferroelectric$(hboxPbZr_0.53hboxTi_0.47hboxO_3)$–Insulator$(hboxDy_2hboxO_3)$–Semiconductor (MFIS) FET for Nonvolatile Memory Applications
3. The electrical properties of Metal–Ferroelectric (PbZr0.53Ti0.47O3)–Insulator–Silicon (MFIS) capacitors with different insulator materials
4. Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C–V measurement; Ferroelectricity in YMnO3/Y2O3/Si structure
5. The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure
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4. Ionizing radiation effect on metal–ferroelectric–insulator–semiconductor memory capacitors;Semiconductor Science and Technology;2015-07-28
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