Evidence for the effect of carbon on oxygen precipitation in Czochralski silicon crystal
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372397
Reference16 articles.
1. Heat‐treatment behavior of microdefects and residual impurities in CZ silicon crystals
2. Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior
3. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
4. Carbon enhancement effect on oxygen precipitation in Czochralski silicon
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1. A density functional theory study of the CiN and the CiNOi complexes in silicon;Modern Physics Letters B;2023-07-10
2. Revisiting the effects of carbon-doping at 1017 cm−3 level on dislocation behavior of Czochralski silicon: from room temperature to elevated temperatures;Journal of Materials Science: Materials in Electronics;2019-01-02
3. Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers;IEEE Journal of Photovoltaics;2018-07
4. IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon;Journal of Materials Science: Materials in Electronics;2017-04-07
5. Photovoltage improvements in Cz–Si by low-energy implantation of carbon ions;Materials Research Express;2016-05-17
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