Electron beam source molecular beam epitaxial growth of analog graded AlxGa1−xAs ballistic transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99394
Reference14 articles.
1. Compositionally Graded Semiconductors and Their Device Applications
2. Techniques for realizing linearly graded composition or doping profiles in molecular-beam epitaxy
3. Molecular-beam epitaxial growth of graded band-gap quaternary GaxAlyIn1−x−yAs multilayer heterostructures on InP: Application to a novel avalanche photodiode with an ultrahigh ionization ratio
4. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
5. A Molecular and Ion-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Ion Beam
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Hot-Electron Transistors;Physics of High-Speed Transistors;1993
2. Molecular beam epitaxy growth and physical characterization of precise, narrow, triangular heterostructures using an analog grading algorithm;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-11
3. Graded compositional heterostructures in the GaAs/AlxGa1−xAs system;Journal of Crystal Growth;1991-05
4. An ultrahigh vacuum, low‐energy ion‐assisted deposition system for III–V semiconductor film growth;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-05
5. Electron Beam Source Molecular Beam Epitaxy of AlxGal−xAs Graded Band Gap Device Structures;Band Structure Engineering in Semiconductor Microstructures;1989
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