Luminescence behavior of semipolar ( 10 1 ¯ 1 ) InGaN/GaN “bow-tie” structures on patterned Si substrates-Reference-Cited by-同舟云学术

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Luminescence behavior of semipolar ( 10 1 ¯ 1 ) InGaN/GaN “bow-tie” structures on patterned Si substrates

Published:2020-01-21 Issue:3 Volume:127 Page:035705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bruckbauer Jochen¹^ORCID,Trager-Cowan Carol¹^ORCID,Hourahine Ben¹,Winkelmann Aimo¹²,Vennéguès Philippe³,Ipsen Anja⁴,Yu Xiang⁵,Zhao Xunming⁵,Wallace Michael J.¹,Edwards Paul R.¹^ORCID,Naresh-Kumar G.¹^ORCID,Hocker Matthias⁴,Bauer Sebastian⁴,Müller Raphael⁴,Bai Jie⁵^ORCID,Thonke Klaus⁴^ORCID,Wang Tao⁵,Martin Robert W.¹^ORCID

Affiliation:

1. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom

2. Laser Zentrum Hannover e.V., D-30419 Hannover, Germany

3. CNRS-CRHEA, Université Côte d’Azur, 06560 Valbonne, France

4. Institute of Quantum Matter, Ulm University, D-89081 Ulm, Germany

5. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

Funder

SUPA

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5129049

Reference46 articles.

1. Moore's law governs the silicon revolution

2. The chips are down for Moore’s law

3. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

4. Strain-induced polarization in wurtzite III-nitride semipolar layers

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spatial distribution of optical intensity of overgrown semi-polar (20-21) InGaN/GaN multiple quantum wells dominated by surface morphology;AIP Advances;2023-06-01

2. Initial Stages of Growth of the GaN(11$$\bar {2}$$2) Layer on a Nano-structured Si(113) Substrate;Semiconductors;2023-03

3. Defects in Semiconductors;Journal of Applied Physics;2020-05-21

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