Identification of the deep level defects in AlN single crystals by electron paramagnetic resonance
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3432755
Reference29 articles.
1. Recent developments in the III-nitride materials
2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
3. Optically detected electron paramagnetic resonance of AlN single crystals
4. Electron paramagnetic resonance of a donor in aluminum nitride crystals
5. Spin resonance investigations ofMn2+in wurtzite GaN and AlN films
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2. Photo-induced electron paramagnetic resonance: A means to identify defects and the defect level throughout the bandgap of ultrawide bandgap semiconductors;Applied Physics Letters;2024-01-22
3. Formation of intrinsic point defects in AlN: a study of donor and acceptor characteristics using hybrid QM/MM techniques;Journal of Materials Chemistry A;2024
4. Quantum embedding methods for correlated excited states of point defects: Case studies and challenges;Physical Review B;2022-06-06
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