Quantifying point defects in Cu2ZnSn(S,Se)4 thin films using resonant x-ray diffraction
Author:
Affiliation:
1. Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
Funder
Basic Energy Sciences (BES)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4964738
Reference23 articles.
1. Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films
2. Sprayed films of stannite Cu2ZnSnS4
3. Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency
4. The path to 25% silicon solar cell efficiency: History of silicon cell evolution
5. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
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