Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations-Reference-Cited by-同舟云学术

Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations

Published:2019-12-07 Issue:21 Volume:126 Page:215103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Murphy-Armando F.¹^ORCID

Affiliation:

1. Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, CorkT12 R5CP, Ireland

Funder

Science Foundation Ireland

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5117345

Reference52 articles.

1. Advances in thermoelectrics

2. Convergence of electronic bands for high performance bulk thermoelectrics

3. Convergence of Conduction Bands as a Means of Enhancing Thermoelectric Performance ofn-TypeMg2Si1−xSnxSolid Solutions

4. A high-throughput thermoelectric power-factor screening tool for rapid construction of thermoelectric property diagrams

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